SK hynix has unveiled an ambitious roadmap for its future technologies, highlighting advancements in HBM5, GDDR7-next, DDR6, and 400+ layer 4D NAND, all aimed for release beyond 2029.
Unveiling the Future of DRAM and NAND
During the SK AI Summit 2025, SK hynix shared its vision for the future of DRAM and NAND flash products. The roadmap is divided into two key timeframes: 2026-2028 and 2029-2031. In the initial phase, SK hynix will develop HBM4 16-Hi and HBM4E 8/12/16-Hi, alongside their custom HBM solutions. This innovative design moves the HBM controller to the HBM Base Die, allowing for larger compute silicon areas and reducing interface power consumption. The custom HBM solution is being developed in collaboration with TSMC.
In addition to custom HBM, SK hynix is also working on conventional DRAM solutions, including LPDDR6 and AI-driven solutions like LPDDR5X SOCAMM2 and LPDDR6-PIM. Their NAND flash lineup will offer PCIe Gen5 eSSD with massive storage capacities and several AI-enhanced NAND solutions.
Looking Ahead to 2029-2031
As we look toward 2029-2031, SK hynix plans to introduce the next generation of HBM5 and HBM5E solutions, along with GDDR7-next and DDR6 products. This next-gen GDDR7-next is anticipated to follow the standard’s evolution, pushing speeds beyond current limits.
SK hynix is poised to revolutionize the memory landscape with its bold steps into the future, focusing on both AI optimization and next-gen technologies. The introduction of 400+ layer 4D NAND and High-Bandwidth Flash aims to meet the demands of AI and next-gen computing.
These developments are set to redefine the capabilities and applications of memory in emerging fields. While the technologies are still a few years away, the anticipation for these advancements is building, promising to reshape what’s possible in tech.