Samsung is gearing up for an exciting showcase at CES 2026, where it will debut its latest technological innovations. Among the highlights are the groundbreaking LPDDR6 memory and the PM9E1 Gen5 SSD, which promise to set new standards in performance and efficiency.
Unveiling the Future of Memory: LPDDR6
As CES 2026 approaches, anticipation builds for Samsung’s introduction of its first LPDDR6 DRAM solutions. Sources indicate that this new memory technology will utilize Samsung’s advanced 12nm process, delivering speeds up to 10.7 Gbps with a 21% efficiency boost over its predecessor, LPDDR5. This significant advancement is expected to revolutionize data-intensive mobile applications, edge computing, and AI workloads.
Currently, the LPDDR5X stands as the pinnacle of Samsung’s DRAM offerings. However, the LPDDR6 is poised to surpass this with an 11.5% increase in transfer speeds and enhanced bandwidth. While specific capacities remain under wraps, they are expected to be unveiled during CES.
As AI, edge computing, and mobile platforms continue to evolve, the demand for faster, more efficient, and secure memory is reaching new heights. LPDDR6 is a next-generation memory solution engineered to meet these demands. Built on an advanced 12nm process, LPDDR6 supports blazing-fast data rates of up to 10.7Gbps and features an expanded I/O count to maximize bandwidth—ideal for data-intensive mobile applications, edge computing, and AI workloads.
A dynamic power management system intelligently tunes power consumption by workload, delivering approximately 21% better energy efficiency than its predecessor. LPDDR6 also introduces enhanced security mechanisms to safeguard data integrity, expanding its role beyond mobile into industrial and mission-critical AI environments. With its scalable, cross-platform architecture and eco-conscious design, LPDDR6 strikes a powerful balance between performance, energy savings, and reliability—making it an essential memory solution for the intelligent systems of tomorrow.
Introducing the Compact Powerhouse: PM9E1 Gen5 SSD
Alongside its DRAM innovations, Samsung will also reveal its latest NAND products, such as the compact PM9E1 M.2 SSD. This device, featuring a 22×42 form factor, is designed for those seeking high-speed performance in a space-saving package. With read speeds reaching 14.8 GB/s and write speeds of 13.4 GB/s, the PM9E1 Gen5 SSD stands as one of the speediest in its class, supporting capacities up to 4 TB.
The PM9E1 Gen5 SSD utilizes Samsung’s “Presto” controller and the V8 TCL V-NAND Flash, ensuring a blend of exceptional power efficiency, responsiveness, and durability. It’s engineered to meet the needs of premium gaming, next-gen AI, and high-end computing, with robust architecture for secure data operations.
PM9E1 M.2 22×42 is the world’s first AI-optimized PCIe Gen5 NVMe SSD in an ultra-compact M.2, 22mm x 42mm form factor, delivering breakthrough performance and spatial efficiency. Designed for premium gaming, next-gen on-device AI, and high-end computing, PM9E1 offers industry-leading sequential read/write speeds of up to 14.8GB/s and 13.4GB/s. With capacities up to 4TB—unprecedented in this size class—it’s engineered for space-constrained compute systems without compromising performance.
PM9E1 M.2 22×42 is powered by Samsung’s in-house “Presto” controller and cutting-edge V8 TLC V-NAND, ensuring exceptional power efficiency, responsiveness, and durability. Its robust architecture supports secure data operations with SPDM (Security Protocol and Data Model) v1.2 for device-level authentication and firmware integrity. Whether accelerating AI workloads or streaming ultra-high-resolution content, PM9E1 defines the future of fast, secure, and compact storage.
Stay tuned for more updates on Samsung’s upcoming technologies at CES 2026, including further announcements on their next-generation GDDR7 modules and other innovations.